?2012 fairchild semiconductor corporation 1 www.fairchildsemi.com FGAF40N60SMD rev. c1 FGAF40N60SMD 600 v 40 a field stop igbt april 2013 absolute maximum ratings notes: *drain current limited by maximum junction temperat ure 1: repetitive rating: pulse width limited by max. j unction temperature symbol description ratings unit v ces collector to emitter voltage 600 v v ges gate to emitter voltage 20 v i c collector current @ t c = 25 o c 80* a collector current @ t c = 100 o c 40* a i cm (1) pulsed collector current 120* a i f diode forward current @ t c = 25 o c 40* a diode forward current @ t c = 100 o c 20* a i fm (1) pulsed diode maximum forward current 120* a p d maximum power dissipation @ t c = 25 o c 79 w maximum power dissipation @ t c = 100 o c 39 w t j operating junction temperature -55 to +175 o c t stg storage temperature range -55 to +175 o c t l maximum lead temp. for soldering purposes, 1/8 from case for 5 seconds 300 o c g e c FGAF40N60SMD 600 v, 40 a field stop igbt features ? maximum junction temperature : t j = 175 o c ? positive temperaure co-efficient for easy parallel operating ? high current capability ? low saturation voltage: v ce(sat) = 1.9 v(typ.) @ i c = 40 a ? high input impedance ? fast swiching: e off = 6.5 uj/a ? tightened parameter distribution ? rohs compliant applications ? sewing machine, cnc ? home appliances, motor-control general description using novel field stop igbt technology, fairchild ? s new series of field stop 2 nd generation igbts offer the optimum perfor- mance for solar inverter, ups, welder and pfc appli cations where low conduction and switching losses are essen tial.
FGAF40N60SMD 600 v 40 a field stop igbt ?2012 fairchild semiconductor corporation 2 www.fairchildsemi.com FGAF40N60SMD rev. c1 thermal characteristics package marking and ordering information electrical characteristics of the igbt t c = 25c unless otherwise noted symbol parameter typ. max. unit r jc (igbt) thermal resistance, junction to case - 1.57 o c / w r jc (diode) thermal resistance, junction to case - 3.27 o c / w r ja thermal resistance, junction to ambient - 40 o c / w device marking device package reel size tape width quant ity FGAF40N60SMD FGAF40N60SMD to-3pf - - 30 symbol parameter test conditions min. typ. max. unit off characteristics bv ces collector to emitter breakdown voltage v ge = 0v, i c = 250 a 600 - - v ? bv ces ? t j temperature coefficient of breakdown voltage v ge = 0v, i c = 250 a - 0.6 - v/ o c i ces collector cut-off current v ce = v ces , v ge = 0v - - 250 a i ges g-e leakage current v ge = v ges , v ce = 0v - - 400 na on characteristics v ge(th) g-e threshold voltage i c = 250 a, v ce = v ge 3.5 4.5 6.0 v v ce(sat) collector to emitter saturation voltage i c = 40a , v ge = 15v - 1.9 - v i c = 40a , v ge = 15v, t c = 175 o c - 2.1 - v dynamic characteristics c ies input capacitance v ce = 30v , v ge = 0v, f = 1mhz - 1880 - pf c oes output capacitance - 180 - pf c res reverse transfer capacitance - 50 - pf switching characteristics t d(on) turn-on delay time v cc = 400v, i c = 40a, r g = 6 , v ge = 15v, inductive load, t c = 25 o c - 12 - ns t r rise time - 20 - ns t d(off) turn-off delay time - 92 - ns t f fall time - 13 17 ns e on turn-on switching loss - 0.87 - mj e off turn-off switching loss - 0.26 0.34 mj e ts total switching loss - 1.13 - mj t d(on) turn-on delay time v cc = 400v, i c = 40a, r g = 6 , v ge = 15v, inductive load, t c = 175 o c - 15 - ns t r rise time - 22 - ns t d(off) turn-off delay time - 116 - ns t f fall time - 16 - ns e on turn-on switching loss - 0.97 - mj e off turn-off switching loss - 0.60 - mj e ts total switching loss - 1.57 - mj
FGAF40N60SMD 600 v 40 a field stop igbt ?2012 fairchild semiconductor corporation 3 www.fairchildsemi.com FGAF40N60SMD rev. c1 electrical characteristics of the igbt (continued) electrical characteristics of the diode t c = 25c unless otherwise noted symbol parameter test conditions min. typ. max unit q g total gate charge v ce = 400v, i c = 40a, v ge = 15v - 119 - nc q ge gate to emitter charge - 13 - nc q gc gate to collector charge - 58 - nc symbol parameter test conditions min. typ. max unit v fm diode forward voltage i f = 20a t c = 25 o c - 2.3 - v t c = 175 o c - 1.67 - e rec reverse recovery energy i f =20a, di f /dt = 200a/ s t c = 175 o c - 48.9 - uj t rr diode reverse recovery time t c = 25 o c - 36 - ns t c = 175 o c - 110 - q rr diode reverse recovery charge t c = 25 o c - 46.8 - nc t c = 175 o c - 445 -
FGAF40N60SMD 600 v 40 a field stop igbt ?2012 fairchild semiconductor corporation 4 www.fairchildsemi.com FGAF40N60SMD rev. c1 typical performance characteristics figure 1. typical output characteristics figure 2. typical output characteristics figure 3. typical saturation voltage figure 4. transfer characteristics characteristics figure 5. saturation voltage vs. case figure 6. saturation voltage vs. v ge temperature at variant current le vel 0 2 4 6 0 20 40 60 80 100 120 v ge = 8v 20v t c = 25 o c 15v 12v 10v collector current, i c [a] collector-emitter voltage, v ce [v] 0 2 4 6 0 20 40 60 80 100 120 v ge = 8v 20v t c = 175 o c 15v 12v 10v collector current, i c [a] collector-emitter voltage, v ce [v] 0 1 2 3 4 0 20 40 60 80 100 120 common emitter v ge = 15v t c = 25 o c t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v] 0 2 4 6 8 10 12 0 30 60 90 120 common emitter v ce = 20v t c = 25 o c t c = 175 o c collector current, i c [a] gate-emitter voltage,v ge [v] 25 50 75 100 125 150 175 1.0 1.5 2.0 2.5 3.0 80a 40a i c = 20a common emitter v ge = 15v collector-emitter voltage, v ce [v] collector-emittercase temperature, t c [ o c] 4 8 12 16 20 0 4 8 12 16 20 i c = 20a 40a 80a common emitter t c = -40 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v]
FGAF40N60SMD 600 v 40 a field stop igbt ?2012 fairchild semiconductor corporation 5 www.fairchildsemi.com FGAF40N60SMD rev. c1 typical performance characteristics figure 7. saturation voltage vs. v ge figure 8. saturation volt age vs. v ge figure 9. capacitance characteristics figure 10. gate charge characteristics figure 11. soa characteristics figure 12. turn-on characteristi cs vs. gate resistance 4 8 12 16 20 0 4 8 12 16 20 80a i c = 20a 40a common emitter t c = 175 o c collector-emitter voltage, v ce [v] gate-emitter voltage, v ge [v] 4 8 12 16 20 0 4 8 12 16 20 i c = 20a 40a 80a common emitter t c = 25 o c collector-emitter voltage , v ce [v] gate-emitter voltage, v ge [v] 0.1 1 10 0 1000 2000 3000 4000 common emitter v ge = 0v, f = 1mhz t c = 25 o c c res c oes c ies capacitance [pf] collector-emitter voltage, v ce [v] 30 0 40 80 120 0 3 6 9 12 15 400v common emitter t c = 25 o c 300v v cc = 200v gate-emitter voltage, v ge [v] gate charge, q g [nc] 0 10 20 30 40 50 1 10 100 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 175 o c t d(on) t r switching time [ns] gate resistance, r g [ ? ] 0.1 1 10 100 1000 0.01 0.1 1 10 100 300 1ms 10ms dc *notes: 1. t c = 25 o c 2. t j = 175 o c 3. single pulse 10 ? s 100 ? s collector current, i c [a] collector-emitter voltage, v ce [v]
FGAF40N60SMD 600 v 40 a field stop igbt ?2012 fairchild semiconductor corporation 6 www.fairchildsemi.com FGAF40N60SMD rev. c1 typical performance characteristics figure 13. turn-off characteristics vs. figure 14. turn-on characteristics v s. gate resistance colle ctor current figure 15. turn-off characteristics vs. figure 16. switching loss vs. collector current gate resistance figure 17. switching loss vs. figure 18. turn off switching collector current soa characteristics 0 10 20 30 40 50 1 10 100 1000 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] gate resistance, r g [ ? ] 20 30 40 50 60 70 80 1 10 100 1000 common emitter v ge = 15v, r g = 6 ? t c = 25 o c t c = 175 o c t r t d(on) switching time [ns] collector current, i c [a] 20 30 40 50 60 70 80 1 10 100 1000 common emitter v ge = 15v, r g = 6 ? t c = 25 o c t c = 175 o c t d(off) t f switching time [ns] collector current, i c [a] 0 10 20 30 40 50 0.1 1 5 common emitter v cc = 400v, v ge = 15v i c = 40a t c = 25 o c t c = 175 o c e on e off switching loss [mj] gate resistance, r g [ ? ] 20 30 40 50 60 70 80 0.1 1 6 common emitter v ge = 15v, r g = 6 ? t c = 25 o c t c = 175 o c e on e off switching loss [mj] collector current, i c [a] 1 10 100 1000 1 10 100 200 safe operating area v ge = 15v, t c = 175 o c collector current, i c [a] collector-emitter voltage, v ce [v]
FGAF40N60SMD 600 v 40 a field stop igbt ?2012 fairchild semiconductor corporation 7 www.fairchildsemi.com FGAF40N60SMD rev. c1 typical performance characteristics figure 19. current derating figure 20. power dissip ation figure 21. load current vs. frequency figure 22. forward characteristic s figure 23. reverse current figure 24. stored charge 25 50 75 100 125 150 175 0 20 40 60 80 100 common emitter v ge = 15v p d , power dissipation [w] t c , case temperature [ o c] 25 50 75 100 125 150 175 0 8 16 24 32 40 48 common emitter v ge = 15v i c , collector current [a] t c , case temperature [ o c] 0 0.5 1.0 1.5 2.0 2.5 3.0 1 10 100 t c = 25 o c t c = 175 o c forward voltage, v f [v] forward current, i f [a] t c = 25 o c t c = 175 o c 1k 10k 100k 1m 0 10 20 30 40 50 60 70 80 90 100 110 120 tc = 75 o c square wave t j < 175 o c, d = 0.5, v ce = 400 v v ge = 15/0 v, r g = 6 ? collector current, i c [a] switching frequency, f [hz] tc = 100 o c 0 5 10 15 20 25 30 35 40 45 0 100 200 300 400 500 600 700 t c = 25 o c t c = 175 o c di/dt = 200a/ ? s di/dt = 100a/ ? s stored recovery charge, q rr [nc] forwad current, i f [a] 0 100 200 300 400 500 600 1e-3 0.01 0.1 1 10 100 1000 t c = 25 o c t c = 175 o c t c = 100 o c reverse currnet, i ces [ ? a] v r [v]
FGAF40N60SMD 600 v 40 a field stop igbt ?2012 fairchild semiconductor corporation 8 www.fairchildsemi.com FGAF40N60SMD rev. c1 typical performance characteristics figure 25. reverse recovery time figure 26.transient thermal impedance of igbt figure 27.transient th ermal impedance of diode 0 5 10 15 20 25 30 35 40 45 0 50 100 150 200 t c = 25 o c t c = 175 o c di/dt = 200a/ ? s di/dt = 100a/ ? s reverse recovery time, t rr [ns] forward current, i f [a] 1e-5 1e-4 1e-3 0.01 0.1 1 10 100 1e-3 0.01 0.1 1 2 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2 1e-5 1e-4 1e-3 0.01 0.1 1 10 100 0.01 0.1 1 4 0.01 0.02 0.1 0.05 0.2 single pulse thermal response [zthjc] rectangular pulse duration [sec] duty factor, d = t1/t2 peak t j = pdm x zthjc + t c 0.5 t 1 p dm t 2
FGAF40N60SMD 600 v 40 a field stop igbt ?2012 fairchild semiconductor corporation 9 www.fairchildsemi.com FGAF40N60SMD rev. c1 mechanical dimensions dimensions in millimeters to-3pf
FGAF40N60SMD 600 v 40 a field stop igbt ?2012 fairchild semiconductor corporation 10 www.fairchildsemi.com FGAF40N60SMD rev. c1 trademarks the following includes registered and unregistered trademarks and service marks, owned by fairchild se miconductor and/or its global subsidiaries, and is not intended to be an exhaustive list of all such trade marks. *trademarks of system general corporation, used un der license by fairchild semiconductor. disclaimer fairchild semiconductor reserves the right to make changes without further notice to any products here in to improve reliability, function, or design. fairchild does no t assume any liability arising out of the applicati on or use of any product or circuit described herein; neither does i t convey any license under its patent rights, nor t he rights of others. these specifications do not expand the terms of fai rchilds worldwide terms and conditions, specifical ly the warranty therein, which covers these products. life support policy fairchilds products are not authorized for use as critical components in life support devices or syst ems without the express written approval of fairchild semiconductor corporation. as used here in: 1. life support devices or systems are devices or s ystems which, (a) are intended for surgical implant into the body or (b) support or sustain life, and (c) whose failure to perform when properly used in accordance with instructions for use provided in the labeling, can be reasonably expected to result in a significant injury of the u ser. 2. a critical component in any component of a life s upport, device, or system whose failure to perform can be reasonably e xpected to cause the failure of the life support device or system, o r to affect its safety or effectiveness. product status definitions definition of terms 2cool? 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